sci-agents-materials-nano

Plugin sci-agents-materials-nano from marketplace plugin-place in galeep/plugin-place. Commands read from the repo's manifest — today.

Subagents (16)

• biomaterials-scientist

  Biomaterials Scientist: Reasons from material-biology interfaces, degradation-product toxicity, and mechanical mismatch to host tissue through ISO 10993 biological evaluation plans, ISO 10993-12 extract conditions, GPC/ICP/SEM characterization, and sterilization validation while treating endotoxin c

• ceramics-engineer

  Ceramics Engineer: Reasons from crystal chemistry, defect equilibria, sintering densification, and flaw statistics through XRD/Rietveld, dilatometry, SEM fractography, impedance spectroscopy, and Weibull analysis per ASTM C1161/C1239/C1421 while treating surface grinding flaws, Pb/alkali volatilizat

• composites-engineer

  Composites Engineer: Reasons from CLT/ABD laminate mechanics, Halpin–Tsai micromechanics, and CMH-17/NCAMP allowables through autoclave/OOA/RTM process control, ASTM D30 mechanical qualification, ultrasonic C-scan and CAI damage tolerance while treating fiber waviness, void content, under-cure, and

• condensed-matter-physicist

  Condensed Matter Physicist: Reasons from Bloch bands, quasiparticles, and symmetry through ARPES/STM/neutron/transport workflows, VASP/QE/Wannier90/DMFT, and Materials Project/ICSD/MPDS while treating matrix-element artifacts, Mott vs. DFT gaps, pseudogap vs. SC gap, and Planckian bad-metal transpor

• corrosion-engineer

  Corrosion Engineer: Reasons from electrochemical couples, Pourbaix/galvanic selection, and ISO 15156 sour-service limits through AMPP SP0169/SP0502 CP and ECDA, CO₂ models (NORSOK M-506, OLI), coupon/ER/LPR monitoring, and ASTM G5/G48/G61 qualification while treating IR-masked CIPS, salt-spray overc

• materials-scientist

  Materials Scientist: Reasons from CALPHAD phase diagrams, Scheil solidification, and Hall–Petch microstructure–property links; validates with XRD Rietveld QPA, EBSD, TEM/STEM, and ASTM mechanical testing while treating preferred orientation, FIB Ga artifacts, EBSD overlap, and Rietveld overfitting a

• metallurgist

  Metallurgist: Reasons from phase diagrams, TTT/CCT paths, and Scheil solidification through Jominy hardenability (ASTM A255), ASM heat-treat cycles, metallography (ASTM E3/E112/E407), and staged failure analysis while treating decarburization, quench cracking, HAZ liquation, hot tearing, and microse

• nanotechnologist

  Nanotechnologist: Reasons from length-scale manufacturing limits, EUV/NIL/EBL patterning, DSA defectivity, and interface-controlled integration through CD-SEM/AFM/TEM metrology, SEMI E10 yield discipline, and ISO 80004/FDA nanomaterial reporting while treating SEM shrinkage, NIL residual-layer non-u

• photovoltaics-solar-cell-scientist

  Photovoltaics / Solar Cell Scientist: Reasons from the Shockley-Queisser detailed-balance limit and the diode coupling of Voc, Jsc, FF, and Rs/Rsh through light I-V, Suns-Voc implied Voc, EQE integration, lifetime mapping (QSSPC, μ-PCD, DLTS), and IEC 60904/61215 qualification while treating spectra

• polymer-scientist

  Polymer Scientist: Reasons from molecular weight distribution, Tg/Tm and crystallinity, viscoelasticity, and phase behavior through GPC/SEC, DSC heat-cool-heat, capillary and oscillatory rheology, WAXD/SAXS, and DMA while treating thermal-history erasure, moisture hydrolysis, incomplete cure, and wr

• quantum-physicist

  Quantum Physicist: Reasons from Hilbert-space density operators, commutation relations, and Lindblad open-system dynamics through randomized benchmarking, gate-set and process tomography, Bell-CHSH tests, and Stim/PyMatching surface-code decoding while treating crosstalk, leakage, calibration drift,

• semiconductor-materials-scientist

  Semiconductor Materials Scientist: Reasons from band structure, defect energetics, and process–structure–property links; grows and characterizes bulk and epitaxial semiconductors (Si, III–V, SiC, GaN, 2D) via MOCVD/MBE/HVPE, Hall/DLTS/XRD/RSM/ECCI/TEM/SIMS, and DFT defect levels while treating compe

• spintronics-physicist

  Spintronics Physicist: Reasons from spin-orbit coupling, spin diffusion length, exchange and DMI, and spin-dependent transport through MTJ/TMR characterization, ST-FMR and harmonic-Hall torque measurement, nonlocal spin valves, and Valet-Fert and MuMax3/OOMMF modeling, while treating barrier pinhole

• superconductivity-scientist

  Superconductivity Scientist: Reasons from BCS/Eliashberg/GL order parameters, pairing symmetry, and vortex physics; validates Tc with Meissner/χ/C triads, phase-sensitive Josephson tests, ARPES/STM gaps, and EPW; uses SuperCon/3DSC and IEC 61788 Ic standards while treating filamentary transitions, p

• surface-engineering-specialist

  Surface Engineering Specialist: Reasons from tribological system design, Archard wear, Stribeck regimes, and Pourbaix/galvanic coupling; selects PVD/CVD/PEO/conversion stacks with HiPIMS etch and interlayers; validates with ISO 20502 scratch, ASTM G99/G133, G119 tribocorrosion, and ISO 14577 nanoind

• tribologist

  Tribologist: Reasons from contact mechanics, lubricant rheology, Stribeck-regime and λ ratio through Hamrock-Dowson EHL film estimates, pin-on-disk/four-ball/SRV/FZG bench tests and SEM-EDS/ferrography scar analysis while treating scuffing, rolling-contact pitting, three-body abrasion and DLC adhesi

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